Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs
p.587
p.587
XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO2, Si/SiOxNy and Si/Si3N4
p.593
p.593
Electrical Stability of Thin Nitroxide Layers on Silicon after RTO/RTN/RTO-Treatment
p.599
p.599
Germanium and Antimony Epitaxy with Large Lattice Misfit
p.605
p.605
TEM Investigations on the Structure and Stability of Diffusion Barriers for VLSI Contacts
p.611
p.611
Defect Characterization of Thick SOI-Layers and Eptaxial Grown Layers on SOI Substrates
p.617
p.617
SOI by Silicon Wafer Direct Bonding - Problems of Wafer Warpage and Surface Chemistry
p.625
p.625
Temperature Profiles Induced by Recrystallization of Silicon-on-Insulator with Scanning Incoherent Light Line Source
p.631
p.631
Zinc and Zinc-Impurity Pairs in Silicon
p.639
p.639
Temperature Profiles Induced by Recrystallization of Silicon-on-Insulator with Scanning Incoherent Light Line Source
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 19-20)
Pages:
631-638
Citation:
Online since:
January 1991
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