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Electrical Evaluation of Silicon on Insulator Structures Formed by Oxygen Implantation by Means of Frequency Resolved Photoconductivity Measurements
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Nonlinear Recombination and Diffusion Processes in Si and GaAs
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Diagnostics of Defects from the Noise Spectra
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Electrical Evaluation of Silicon on Insulator...

Electrical Evaluation of Silicon on Insulator Structures Formed by Oxygen Implantation by Means of Frequency Resolved Photoconductivity Measurements

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

511-516

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.511

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Online since:

January 1991

Authors:

F. Coromina, A. Pérez-Rodríguez, J.R. Morante, M.A. Lourenço, K.P. Homewood, P.L.F. Hemment

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