Boron-Oxygen-Related Defect in Silicon

Lyudmila I. Khirunenko; Yurii V. Pomozov; Mikhail G. Sosnin; A.V. Duvanskii

doi:10.4028/www.scientific.net/SSP.178-179.178

Paper Titles

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1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Boron-Oxygen-Related Defect in Silicon

Boron-Oxygen-Related Defect in Silicon

Abstract:

In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illumin^{Superscript text}ation with intensity of 70 mW/cm². It was shown that both oxygen and boron are the component of the defect to which found band corresponds. It was revealed that defect occurs also during thermal treatments of silicon without illumination when a weak current was applied to the sample upon the treatment. The assumption was made that the formation of defect occurs both as result of direct interaction of components and through intermediate metastable states.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

178-182

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.178

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Online since:

August 2011

Authors:

Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii

Keywords:

Boron, Illumination, Oxygen, Silicon, Solar Cell

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