Annealing Behavior after Ion Shower Doping for the Fabrication of LTPS-TFTs
p.231
p.231
Fabrication of Porous YSZ from ZnO-YSZ Cermet
p.235
p.235
Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD
p.239
p.239
Effects of Firing Temperature and Film Thickness on the Critical Properties of YBCO Film by the '211 Process'
p.243
p.243
Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors
p.247
p.247
Electronic Properties Carbon Film Using Chemical Process
p.251
p.251
Microstructural Study on the Wear Behavior of Cu-TiB2 Composites for Electrical Contact Materials
p.255
p.255
Study on Light Induced Leakage Current Related to Amorphous Silicon TFT Design
p.259
p.259
Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature
p.263
p.263
Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors
Abstract:
SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.
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Info:
Periodical:
Solid State Phenomena (Volumes 124-126)
Pages:
247-250
Citation:
Online since:
June 2007
Keywords:
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