High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Rafael Dalmau; H. Spalding Craft; Jeffrey Britt; Elizabeth Paisley; Baxter Moody; Jian Qiu Guo; Yeon Jae Ji; Balaji Raghothamachar; Michael Dudley; Raoul Schlesser

doi:10.4028/www.scientific.net/MSF.924.923

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HomeMaterials Science ForumMaterials Science Forum Vol. 924High Quality AlN Single Crystal Substrates for...

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Abstract:

Aluminum nitride (AlN) single crystal boules were grown by physical vapor transport (PVT). Diameter expansion during boule growth, without the introduction of low angle grain boundaries (LAGB) around the boule periphery, was confirmed by crossed polarizer imaging, synchrotron white beam x-ray topography (SWBXT), and synchrotron monochromatic beam x-ray topography (SMBXT). The densities of basal plane dislocations (BPD) and threading edge dislocations (TED) averaged from high-magnification topographs of five regions of a high-quality substrate were 0 cm^-2 and 992 cm^-2, respectively. Substrates fabricated from AlN boules possessed excellent surface finishes suitable for epitaxy.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

923-926

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.923

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Online since:

June 2018

Authors:

Rafael Dalmau*, H. Spalding Craft, Jeffrey Britt, Elizabeth Paisley, Baxter Moody, Jian Qiu Guo, Yeon Jae Ji, Balaji Raghothamachar, Michael Dudley, Raoul Schlesser

Keywords:

Aluminum Nitride, Dislocation, Low Angle Grain Boundaries, Physical Vapor Transport, Single Crystal, X-Ray Topography

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