Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer

Yutaka Fukui; Katsutoshi Sugawara; Kohei Adachi; Hideyuki Hatta; Kazuya Konishi; Koji Sadamatsu; Nobuo Fujiwara; Shingo Tomohisa; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.924.761

Paper Titles

Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs
p.743

Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets
p.748

Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC
p.752

Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs
p.756

Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer
p.761

Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss
p.765

Development of a High-Performance 3,300V Silicon Carbide MOSFET
p.770

Comparison of 3C-SiC and 4H-SiC Power MOSFETs
p.774

Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET
p.778

HomeMaterials Science ForumMaterials Science Forum Vol. 924Impact of Stripe Trench-Gate Structure for 4H-SiC...

Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer

Abstract:

An optimized layout for a trench-gate SiC-MOSFET with a self-aligned Bottom P-Well (BPW) was investigated for reduction of the specific on-resistance and switching loss. The static and dynamic characteristics of trench-gate MOSFETs with lattice and stripe in-plane structures were evaluated by varying the distance between neighboring BPWs (d_BPWs). For the stripe structure, more significant improvements on the specific on-resistance (R_on,sp), gate-source threshold voltage (V_th) were achieved compared with the lattice structure, which was found to be due to the difference in the spread of the depletion layer and the channel planes in the device.