Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing
p.389
p.389
Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC
p.393
p.393
Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer
p.397
p.397
Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC
p.401
p.401
Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC
p.405
p.405
Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face
p.409
p.409
Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
p.413
p.413
Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs
p.419
p.419
4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
p.423
p.423
Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC
Abstract:
A sandwich structure of Ni/Nb/4H-SiC was prepared and annealed at different temperature from 750°C to 1050°C. The electrical property and crystalline structure of Ni/Nb electrode was characterized by transmission line method and X-ray diffraction. It was found that the annealing temperature and the thickness of Ni/Nb layer played an important role in obtaining Ohmic contact. A low specific contact resistance of 1.1×10-5 Ω·cm2 was obtained when the Ni(50nm)/Nb(50nm) electrode was annealed at 1050°C. The Ohmic contact mechanism of Ni/Nb/4H-SiC was proposed.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 924)
Pages:
405-408
Citation:
Online since:
June 2018
Authors:
Keywords:
Price:
Permissions: