Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs

Arash Salemi; Hossein Elahipanah; Carl-Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.858.958

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Geometrical Effect Dependency on the On-State...

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs

Abstract:

The influence of varying the emitter-base geometry, i.e., the emitter width (W_E), emitter contact–emitter edge distance (W_n), and base contact–emitter edge (W_p) on the on-state characteristics in 5.6 kV implantation free 4H-SiC BJTs are investigated. The BJTs present a clear emitter size effect pointing out that surface recombination has a significant influence on current gain (β). The results show that the influence of varying W_p on the β is higher than W_n. A distance of 3 μm between emitter contact and base contact to the emitter edge (W_n = W_p = 3 μm) is the optimized value to have a BJT with a high β, and low on-resistance (R_O_N) at a given W_E.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

958-961

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.958

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Online since:

May 2016

Authors:

Arash Salemi*, Hossein Elahipanah, Carl-Mikael Zetterling, Mikael Östling

Keywords:

Bipolar Junction Transistor (BJT), Current Density, Current Gain, Implantation Free, On-Resistance, Silicon Carbide (SiC)

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