Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

Valdas Jokubavicius; Michl Kaiser; Philip Hens; Peter J. Wellmann; Rickard Liljedahl; Rositza Yakimova; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.19

Paper Titles

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
p.3

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
p.7

SiC Single Crystal Growth on Dual Seed with Different Surface Properties
p.11

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Morphological and Optical Stability in Growth of...

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

Abstract:

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.