The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC

Kunhwa Jung; Daisuke Ando; Yuji Sutou; Tetsuya Oyamada; Masamoto Tanaka; Junichi Koike

doi:10.4028/www.scientific.net/MSF.717-720.829

Paper Titles

Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process
p.813

High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC
p.817

High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices
p.821

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
p.825

The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC
p.829

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC
p.833

Electroless Nickel for N-Type Contact on 4H-SiC
p.837

Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide
p.841

Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
p.845

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720The Thickness-Ratio Effects of Ni/Nb Electrode on...

The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC

Abstract:

The thickness-ratio effects of Ni/Nb bi-layer electrodes were studied for power device applications. The reaction microstructure and electrical contact property were investigated after annealing at 1000 °C and compared with the results of an Ni electrode. Microstructure-related problems of the Ni electrode could be successfully resolved without sacrificing ohmic contact behavior by the addition of Nb to a Ni based electrode. Carbon precipitation was reduced with increasing Nb thickness by the formation of carbides, which led to good adhesion between the electrode and a wiring pad. High shear strength of the bonded wire was also obtained by the elimination of the carbon precipitates on the electrode surface.