Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation

Markus Ostler; Roland J. Koch; Florian Speck; Felix Fromm; Hendrik Vita; Martin Hundhausen; Karsten Horn; Thomas Seyller

doi:10.4028/www.scientific.net/MSF.717-720.649

Paper Titles

Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
p.633

Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
p.637

Electrical Characterization of the Graphene-SiC Heterojunction
p.641

Epitaxial Single-Layer Graphene on the SiC Substrate
p.645

Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation
p.649

Studies of Li Intercalation into Epitaxial Graphene on SiC(0001)
p.653

Plasma-Based Chemical Modification of Epitaxial Graphene
p.657

Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy
p.661

Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy
p.665

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Decoupling the Graphene Buffer Layer from...

Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation

Abstract:

Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC interface is a well studied topic since successful intercalation has been shown for hydrogen [1-3]. Recently, intercalation was also shown for oxygen [4, 5]. We present ARPES, XPS and Raman spectroscopy studies to determine the quality of oxygen intercalated buffer layer samples in terms of decoupling and integrity of the transformed graphene layer. The decoupling effect is demonstrated by ARPES measurements showing a graphene-like π band. XPS shows whether the oxidation takes place in the buffer layer or at the interface. Raman spectroscopy is well suited to investigate oxygen induced defects in graphene-like material.