Tuning Residual Stress in 3C-SiC(100) on Si(100)
p.159
p.159
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
p.163
p.163
Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
p.167
p.167
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
p.171
p.171
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
p.175
p.175
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
p.179
p.179
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
p.183
p.183
SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
p.187
p.187
Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC
p.193
p.193
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
Abstract:
Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.
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Info:
Periodical:
Materials Science Forum (Volumes 645-648)
Pages:
175-178
Citation:
Online since:
April 2010
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