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HomeMaterials Science ForumMaterials Science Forum Vols. 645-6482H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111)...

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates

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Abstract:

We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures grown on silicon substrates using a SiC transition layer. The growth of AlGaN/GaN heterostructures on Si (111) was performed using metalorganic chemical vapour deposition (MOCVD). The (111) SiC transition layer was realized by low pressure CVD and prevented Ga-induced meltback etching and Si-outdiffusion in the subsequent MOCVD growth. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface showed an electron sheet density of 1.5x1013 cm-3 and a mobility of 870 cm²/Vs proving the high structural quality of the heterostructure. Device processing was done using electron beam lithography. DC and RF characteristics were analysed and showed a peak cut-off frequency as high as 6 GHz for a 1.2 µm gate HEMT.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1219-1222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1219

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Online since:

April 2010

Authors:

Katja Tonisch, Wael Jatal, Ralf Granzner, Mario Kittler, Uwe Baumann, Frank Schwierz, J. Pezoldt

Keywords:

Chemical Vapor Deposition (CVD), Heteroepitaxy, High Electron Mobility Transistor

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