Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Nguyen Tien Son; Junichi Isoya; Norio Morishita; Takeshi Ohshima; Hisayoshi Itoh; Adam Gali; Erik Janzén

doi:10.4028/www.scientific.net/MSF.615-617.377

Paper Titles

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
p.361

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
p.365

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC
p.369

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
p.373

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
p.377

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
p.381

Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.385

Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
p.389

Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
p.393

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Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Abstract:

Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.