Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Antonella Poggi; Francesco Moscatelli; Yasuto Hijikata; Sandro Solmi; Michele Sanmartin; Fabrizio Tamarri; Roberta Nipoti

doi:10.4028/www.scientific.net/MSF.556-557.639

Paper Titles

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A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
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Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
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Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
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Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)
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Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited Si_xN_y
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Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
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Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
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Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Abstract:

Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of implantation dose, including a high dose able to amorphise a surface SiC layer with the intent to reduce the oxidation time. The oxide quality and the SiO2-SiC interface properties were characterized by capacitance-voltage measurements of the MOS capacitors. The proposed process, in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce the density of interface states near the conduction band edge if a high concentration of nitrogen is introduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiC interface reduces the interface states and we did not observe the generation of fixed positive charges in the oxide as a consequence of nitrogen implantation. Furthermore, the concentration of the slow traps evaluated from the Slow Trap Profiling technique was low and did not depend on the nitrogen implantation fluence.