Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies

M. Gao; Sergey P. Tumakha; T. Onishi; Susumu Tsukimoto; Masanori Murakami; Leonard J. Brillson

doi:10.4028/www.scientific.net/MSF.527-529.891

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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Characterization of Ti/Al Ohmic Contacts to p-Type...

Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies

Abstract:

We have used depth-resolved cathodoluminescence and Auger electron spectroscopies, DRCLS and AES, respectively, to probe the electronic structure and the composition of Ti/Al ohmic contacts to p-type SiC on a nanometer scale. A continuous Ti-Si-C compound layer was observed using the Auger depth profile. No interfacial Al segregation was found. The secondary electron threshold technique showed a continuous decrease in work function from the p-type SiC to the Ti-Si-C compound layer. Our results support an ohmic contact mechanism by an intermediate semiconductor layer which reduces the otherwise large interfacial Schottky barrier height. DRCLS revealed a ~2.78 eV sub-band gap transition enhanced by interfacial reaction in the near-interface SiC, suggesting the formation of additional C or Si vacancies.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

891-894

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.891

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Online since:

October 2006

Authors:

M. Gao, Sergey P. Tumakha, T. Onishi, Susumu Tsukimoto, Masanori Murakami, Leonard J. Brillson

Keywords:

Auger depth profile, Auger Electron Spectroscopy (AES), Cathodoluminescence, Ohmic Contact, Secondary Electron Threshold

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References

[1] S. Tsukimoto, K. Nitta, T. Sakai, M. Moriyama and M. Murakami: J. Electr. Mater. Vol. 33 (2004), p.460.

Google Scholar

[2] S. Tanimoto, N. Kritani, M. Hoshi and H. Okushi: Mater. Sci. Forum Vol. 389-393 (2002), p.879.

Google Scholar

[3] B.J. Johnson and M.A. Capano: J. Appl. Phys. Vol. 95 (2004), p.5616.

Google Scholar

[4] Y. Sakai, M. Kudo and C. Nielsen: J. Vac. Sci. Technol. A Vol. 19 (2001), p.1139.

Google Scholar

[5] M. Melloch and J. Cooper: MRS Bull. Vol. 22 (1997), p.42.

Google Scholar

[6] N.T. Son, B. Magnusson and E. Janzén: Appl. Phys. Lett. Vol. 81 (2002), p.3945.

Google Scholar

[7] F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Castaldini and A. Cavallini: Microelectronic Engineering: Vol. 70 (2003), p.519.

DOI: 10.1016/s0167-9317(03)00464-7

Google Scholar

[8] T. Wimbauer, B.K. Meyer, A. Hofstaetter, A. Scharmann and H. Overhof: Phys. Rev. B Vol. 56 (1997), p.7384.

Google Scholar

[9] S.Y. Han, K.H. Kim, J.K. Kim, H.W. Jang, K.H. Lee, N.K. Kim, E.D. Kim and J.L. Lee: Appl. Phys. Lett. Vol. 79 (2001).

Google Scholar