Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes

Yuki Negoro; Tsunenobu Kimoto; Hiroyuki Matsunami; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.527-529.843

Paper Titles

Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements
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Variations in the Effects of Implanting Al at Different Concentrations into SiC
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Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
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Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
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Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
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Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
p.847

High Dose High Temperature Ion Implantation of Ge into 4H-SiC
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Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences
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An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Kick-Out Phenomena in Epitaxially Boron- and...

Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes

Abstract:

It is investigated whether the homogeneous depth profiles of epitaxially doped B or Al are changed or preserved by implantation of various implanted species and annealing processes. We have found a strong decrease in the atomic B concentration in epitaxially B-doped layers after implantation of N+, Al+, and P+ and subsequent annealing at 1700 °C. On the other hand, the Al profiles in epitaxially Al-doped layers are preserved after the same processes.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

843-846

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.843

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Online since:

October 2006

Authors:

Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami, Gerhard Pensl

Keywords:

Annealing, Diffusion, Interstitial, Ion Implantation, Kick-Out

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References

[1] M. V. Rao, J. A. Gardner, P. H. Chi, O. W. Holland, G. Kelner, J. Kretchmer, and M. Ghezzo: J. Appl. Phys. Vol. 81 (1998), p.6635.

Google Scholar

[2] T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier: Phys. Status Solidi A Vol. 162 (1997), p.277.

DOI: 10.1002/1521-396x(199707)162:1<277::aid-pssa277>3.0.co;2-c

Google Scholar

[3] M. Bockstedte, A. Mattausch, and O. Pankratov: Phys. Rev. B Vol. 70 (2004) p.115203.

Google Scholar

[4] Y. Negoro, T. Kimoto, and H. Matsunami: Mater. Sci. Forum Vol. 483-485 (2005), p.617 Fig. 4. SIMS depth profiles of implanted P and epitaxially-doped Al concentrations in 4H-SiC (0001) before and after annealing at 1700 ˚C for 30 min.

DOI: 10.4028/www.scientific.net/msf.483-485.617

Google Scholar

[10] [15] [10] [16] [10] [17] [10] [18] [10] [19] Concentration (cm -3 ) 1. 00. 80. 60. 40. 20 Depth (µm) P + implantation into Al-doped 4H-SiC implanted P before annealing after annealing epitaxially doped Al before annealing after annealing.

DOI: 10.1088/1674-1056/ab3cc2

Google Scholar