Study of Ion Induced Damage in 4H-SiC

A. Lo Giudice; P. Oliveira; F. Fizzotti; Claudio Manfredotti; E. Vittone; Stefano Bianco; Giuseppe Bertuccio; R. Casiraghi; M. Jaksic

doi:10.4028/www.scientific.net/MSF.483-485.389

Paper Titles

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
p.373

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
p.377

Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
p.381

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
p.385

Study of Ion Induced Damage in 4H-SiC
p.389

Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
p.393

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
p.397

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
p.401

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
p.405

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Study of Ion Induced Damage in 4H-SiC

Study of Ion Induced Damage in 4H-SiC

Abstract:

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.