Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
p.201
p.201
Challenge to 200 mm 3C-SiC Wafers Using SOI
p.205
p.205
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209
p.209
Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213
p.213
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217
p.217
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221
p.221
Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225
p.225
Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229
p.229
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
p.233
p.233
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
Abstract:
This paper gives an insight into the thermal modeling of the i-FLASiC process, which is the flash lamp annealing of a 3C-SiC and silicon multilayer system. The model uses a standard heat flow model combined with an advanced multilayer optical model. Results from the model are consistent with experimentally observed phenomenon and have been used to explain diffusion mechanisms for the LPE of SiC.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
217-220
Citation:
Online since:
May 2005
Authors:
Keywords:
Price:
Permissions: