UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films

Letian Zhang; Wenfa Xie; Yong Hou; Aiwu Li; Jie Zheng; Wei Zheng; Yushu Zhang

doi:10.4028/www.scientific.net/MSF.475-479.1837

Paper Titles

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Control of Morphology of YBO₃:Eu by a Mild Hydrothermal Process
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Simulation of the MOCVD Reactor for ZnO Growth
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UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films
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Investigation of the Optical Properties of CdZnTe by IR Transmission and PL Spectra
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Effect of Pattern Shape on the Crystallization in FALC Process
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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479UV-Irradiation-Induced Refractive Index Increase...

UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films

Abstract:

Ge-doped silica glass films were fabricated on Si (100) substrates for core materials of waveguide using flame hydrolysis deposition. Then the films were hydrogen loaded and irradiated to KrF excimer laser. The refractive indices and extinction coefficients of the samples before and after irradiation were determined using M-2000 variable angle incidence spectroscopic ellipsometer (VASE) and obtain the maximum increase about 0.3% at 1550 nm.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1837-1840

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1837

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Online since:

January 2005

Authors:

Letian Zhang, Wenfa Xie, Yong Hou, Aiwu Li, Jie Zheng, Wei Zheng, Yushu Zhang

Keywords:

Ge-Doped Silica, KrF Excimer Laser, Refractive Index

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