Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
p.677
p.677
Electrochemical C-V Profiling of n-Type 4H-SiC
p.681
p.681
Impurity Conduction Observed in Al-Doped 6H-SiC
p.685
p.685
Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility
p.689
p.689
High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures
p.693
p.693
As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
p.697
p.697
Impact Ionization in α-SiC and Avalanche Photoamplifiers
p.701
p.701
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
p.705
p.705
The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
p.711
p.711
High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
693-696
Citation:
Online since:
June 2004
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