Committees
p.4
p.4
Preface
p.5
p.5
SiC Crystal Growth by HTCVD
p.9
p.9
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
p.15
p.15
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
p.21
p.21
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
p.29
p.29
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
p.35
p.35
Large Diameter 4H-SiC Substrates for Commercial Power Applications
p.41
p.41
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
p.47
p.47
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
21-28
Citation:
Online since:
June 2004
Authors:
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