Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices

J. Dunning; Xiao An Fu; Srihari Rajgopal; Mehran Mehregany; Christian A. Zorman

doi:10.4028/www.scientific.net/MSF.457-460.1523

Paper Titles

Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode
p.1507

Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
p.1511

Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
p.1515

Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique
p.1519

Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices
p.1523

Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film
p.1527

Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates
p.1531

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
p.1537

Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
p.1541

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Characterization of Polycrystalline SiC Thin Films...

Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1523-1526

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1523

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Online since:

June 2004

Authors:

J. Dunning, Xiao An Fu, Srihari Rajgopal, Mehran Mehregany, Christian A. Zorman

Keywords:

Micro Machining, Micro-Electromechanical System (MEMS), Poly-SiC, Stress, Stress Gradient, Young's Modulus

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References

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