Paper Titles

SiC BJT Technology for Power Switching and RF Applications
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Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
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High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors
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Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
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1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
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4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
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A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
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A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
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A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-4601,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET...

1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1157-1160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1157

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Cite this paper

Online since:

June 2004

Authors:

Leonid Fursin, Larry X. Li, Jian Hui Zhao

Keywords:

4H-SiC, High Voltage (HV), Junction Field Effect Transistor (JFET), Power Junction Field-Effect Transistor

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