High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration
p.793
p.793
Design and Technology Considerations for a RF BJT in SiC
p.797
p.797
Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate
p.801
p.801
SiC Power Devices: How to be Competitive towards Si-Based Solutions?
p.805
p.805
SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations
p.813
p.813
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
p.819
p.819
Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
p.823
p.823
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
p.827
p.827
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
p.831
p.831
SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
813-818
Citation:
Online since:
September 2003
Keywords:
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