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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436SiC Power Devices on QUASIC and SiCOI Smart-Cut®...

SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

813-818

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.813

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Cite this paper

Online since:

September 2003

Authors:

Fabrice Letertre, Francois Templier, N. Daval, Edwige Bano, Dominique Planson, Lea Di Cioccio, E. Jalaguier, Jean Marie Bluet, Thierry Billon, Roland Madar, Jean-Pierre Chante

Keywords:

CVD Epitaxy, QUASIC, Schottky Diode, SiCOI, Silicon Carbide (SiC), Smart-Cut^®, SOI, Wafer Bonding

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