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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Damage Relaxation Pre-Activation Anneal in...

Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

617-620

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.617

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Cite this paper

Online since:

September 2003

Authors:

Wook Bahng, Geun Ho Song, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Hyoung Wook Kim, Eun Dong Kim

Keywords:

Activation, Anneal, Damage, Implantation, Morpholoy, Silicon Carbide (SiC)

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