Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.921
p.921
Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
p.925
p.925
Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
p.929
p.929
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
p.933
p.933
Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
p.937
p.937
Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide
p.941
p.941
Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact
p.945
p.945
Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process
p.949
p.949
Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma
p.953
p.953
Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
937-940
Citation:
Online since:
April 2002
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