Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC
p.679
p.679
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
p.683
p.683
Scanning Acoustic Microscopy in Porous SiC
p.687
p.687
Atomic-Scale Passivation of Silicon Carbide Surfaces
p.691
p.691
Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3
p.697
p.697
Oxidation States Present on SiC (0001) after Oxygen Exposure
p.701
p.701
Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3x√3-R30°
p.705
p.705
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
p.709
p.709
A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces
p.713
p.713
Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
697-700
Citation:
Online since:
April 2002
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