Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays
p.121
p.121
Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
p.127
p.127
Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching
p.133
p.133
The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
p.139
p.139
Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect
p.145
p.145
Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature
p.151
p.151
Dislocation Activities in Bulk GeSi Crystals
p.159
p.159
Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS
p.165
p.165
Molecular-Dynamics Simulations of Microscopic Defects in Silicon
p.171
p.171
Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect
Abstract:
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Periodical:
Materials Science Forum (Volumes 258-263)
Pages:
145-150
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Online since:
December 1997
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