Positron-Annihilation 2D-Acar Study of Divacancy and Vacancy-Oxygen Pairs in Si
p.1481
p.1481
Defect Studies with Isotopically Designed Semiconductors
p.1491
p.1491
The Chemical Identification of Defect Impurities Using Radioactive Isotopes
p.1497
p.1497
Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels
p.1503
p.1503
Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process
p.1509
p.1509
The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
p.1515
p.1515
Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors
p.1521
p.1521
Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
p.1527
p.1527
High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay
p.1531
p.1531
Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 196-201)
Pages:
1509-1514
Citation:
Online since:
November 1995
Authors:
Keywords:
Price:
Permissions: