AES Study of the GaAs-Germanium Oxynitride Interface
p.165
p.165
Passivation Studies of Se/GaAs Interface using X-Ray Photoelectron and Photoluminescence Spectroscopy
p.171
p.171
Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer
p.179
p.179
Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation
p.185
p.185
Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
p.191
p.191
Passivation of InP for Optoelectronics
p.199
p.199
Formation of Oxide Films on HgCdTe after Fluorine-Consist Rinsing
p.209
p.209
STM and AFM Studies of Passive Films
p.221
p.221
Disorder and Structural Relaxation in Passive Films on Fe-Cr Alloys
p.233
p.233
Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 185-188)
Pages:
191-198
Citation:
Online since:
March 1995
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