Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence
p.501
p.501
Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation
p.507
p.507
Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex
p.513
p.513
Diffusion, Interface Mixing and Schottky Barrier Formation
p.519
p.519
Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs
p.531
p.531
1D Properties of Straight Dislocation Segments in Si and Ge
p.537
p.537
Metastable Surface Defects in p-Type GaAs
p.543
p.543
Raman Study of Misfit Dislocations in ZnSe/GaAs Structures
p.549
p.549
Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen
p.555
p.555
Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
531-536
Citation:
Online since:
October 1993
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