DLTS of Recombination Centres in Semiconductors
p.1381
p.1381
Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
p.1387
p.1387
A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals
p.1391
p.1391
Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si
p.1397
p.1397
Defect Concentration Gradients at Semiconductor Junctions
p.1403
p.1403
Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices
p.1409
p.1409
Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films
p.1415
p.1415
U-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam Doping
p.1421
p.1421
Zinc Diffusion in Gallium Antimonide
p.1427
p.1427
Defect Concentration Gradients at Semiconductor Junctions
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
1403-1408
Citation:
Online since:
October 1993
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