Microstructures and Photoluminescence of Electrochemically-Deposited ZnO Films on Porous Silicon and Silicon

Lan Li Chen; Zhong Ke Tang; Ming Ji Shi

doi:10.4028/www.scientific.net/KEM.538.30

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 538Microstructures and Photoluminescence of...

Microstructures and Photoluminescence of Electrochemically-Deposited ZnO Films on Porous Silicon and Silicon

Abstract:

ZnO films covered with microrods were grown on silicon and porous silicon through electrochemical deposition with silicon or porous silicon as cathode, a platinum wire as anode, and zinc chloride solution of 0.05mol/L as electrolyte. The morphologies by SEM and the crystal structures by XRD were studied. The photoluminescence spectra were also measured. And the mechanisms of the growth and the photoluminescence of the ZnO thin films were analyzed and compared. Studies showed that the luminous intensity of ZnO thin films is different under different conditions, but its peak is located between 370-385nm, luminous intensity of the ZnO film deposited on porous silicon and then annealed is weaker.

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Periodical:

Key Engineering Materials (Volume 538)

Pages:

30-33

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.538.30

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Cite this paper

Online since:

January 2013

Authors:

Lan Li Chen, Zhong Ke Tang, Ming Ji Shi

Keywords:

Electrochemical Deposition, Photoluminescence (PL), Porous Silicon, ZnO Microrods

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