Effect of Oxynitride Grain Boundary Phase on Toughening of Silicon Nitride Ceramics

Takafumi Kusunose; Tohru Sekino; P.E.D. Mogan; Koichi Niihara

doi:10.4028/www.scientific.net/KEM.317-318.649

Paper Titles

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Electrical Properties of AlN-SiC Ceramics
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Fabrication of Electronic Conductive Silicon Nitride Ceramics by Convenient Powder Metallurgical Process
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Effect of Oxynitride Grain Boundary Phase on Toughening of Silicon Nitride Ceramics
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Electrically Conductive Aluminum Nitride Ceramics Containing In-Situ Synthesized Boron Carbonitride
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Fabrication of Conductive Alumina by Gelcasting and Reduction Sintering
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Preparation and Electrical Properties of Carbon Nanotubes Dispersed Zirconia Nanocomposites
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Synthesis and Densification of CNTs/Fe/Al₂O₃ Nanocomposite Powders by Chemical Vapor Deposition
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 317-318Effect of Oxynitride Grain Boundary Phase on...

Effect of Oxynitride Grain Boundary Phase on Toughening of Silicon Nitride Ceramics

Abstract:

The Si3N4/YSiO2N composite in which crystalline YSiO2N was formed as grain boundary phase was fabricated by hot-pressing the mixture of SiO2, Si3N4 and Y2O3. The fracture toughness of this composite was significantly improved, compared to the Si3N4 composites containing Y5Si3O12N or Y2Si3O3N4 as a grain boundary phases. To clarify the toughening mechanism, the microstructure and the crack propagation profiles were observed.

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Key Engineering Materials (Volumes 317-318)

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649-652

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https://doi.org/10.4028/www.scientific.net/KEM.317-318.649

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Online since:

August 2006

Authors:

Takafumi Kusunose, Tohru Sekino, P.E.D. Mogan, Koichi Niihara

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