Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes

Hugo Águas; Elvira Fortunato; Luís Pereira; V. Silva; Rodrigo Martins

doi:10.4028/www.scientific.net/KEM.230-232.587

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Influence of the Plasma Regime on the Structural, Optical and Transport Properties of a-Si:H Thin Films
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Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 230-232Role of the i-Layer Thickness in the Performance...

Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes

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Periodical:

Key Engineering Materials (Volumes 230-232)

Pages:

587-590

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.230-232.587

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Online since:

October 2002

Authors:

Hugo Águas, Elvira Fortunato, Luís Pereira, V. Silva, Rodrigo Martins

Keywords:

Amorphous Silicon, Atomic Force Microscope (AFM), I-V Curves, MTPECVD, Position Sensors, Schottky Diode

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