Surface Coulomb Traps
p.603
p.603
Impurity Polarizability in Silicon Due to the Magnetic Degeneracy of Donor States in a Finite Magnetic Field
p.611
p.611
New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-Resolution EPR Data
p.619
p.619
Definition of the Off-Center Positions Coordinates of Boron in 6H SiC from High-Resolution EPR Spectra
p.627
p.627
EPR and DLTS of Point Defects in Silicon Carbide Crystals
p.633
p.633
Electronic Structure of Boron in Silicon Carbide
p.645
p.645
EPR of the Antisite Defect in Epitaxial Layers of 4H SiC
p.655
p.655
Electron Structure of 11B Impurity in 6H SiC Crystal Measured by Endor
p.661
p.661
Models of Impurity Boron in Various SiC Polytypes
p.667
p.667
EPR and DLTS of Point Defects in Silicon Carbide Crystals
Abstract:
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Info:
Periodical:
Defect and Diffusion Forum (Volumes 103-105)
Pages:
633-644
Citation:
Online since:
January 1993
Authors:
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