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Protective Alumina Coatings by Low Temperature Metalorganic Chemical Vapour Deposition

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Abstract:

Alumina thin films were processed by MOCVD from aluminium tri-iso-propoxide, with N2 as a carrier gas, occasional addition of water in the gas phase, deposition temperature in the range 350-700°C, total pressure 0.67 kPa (2 kPa when water was used). The films do not diffract Xray when prepared below 700°C. At 700°C, they start to crystallize as γ-alumina. EDS, EPMA, ERDA, RBS, FTIR and TGA revealed that films prepared in the range 350-415°C, without water in the gas phase, have an overall composition Al2O3-x(OH)2x, with x tending to 0 with increasing temperature. Al2O3 is obtained above 415°C. When water is added in the gas phase, the film composition is Al2O3, even below 415°C. Coatings deposited in these conditions show promising protection properties.

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Periodical:

Advanced Materials Research (Volume 23)

Pages:

245-248

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.23.245

Citation:

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Online since:

October 2007

Authors:

Maria Magdalena Şovar, Diane Samelor, Alain Gleizes, P. Alphonse, S. Perisanu, C. Vahlas

Keywords:

Aluminium Tri-Isopropoxide, Aluminum (Al), LP-MOCVD, Thin Film

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