Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
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eBook:

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ToC:

Table of contents

Editors:

Roland Madar, Jean Camassel and Elisabeth Blanquet

DOI:

https://doi.org/10.4028/b-hMpl7W

BIC:

TGM

BISAC:

TEC021000

Keywords:

3C-SiC, 4H-SiC, 6H-SiC, Breakdown Voltage, Chemical Vapor Deposition (CVD), Defect, Dislocation, DLTS, Edge Termination, Gallium Nitride (GaN), Interface States (or Traps), Ion Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Micropipe, Oxidation, Photoluminescence (PL), PiN Diode, Silicon Carbide (SiC), Stacking Fault, TEM

Details:

Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Pages:

1548

Year:

2004

ISBN-13:

9780878499434

ISBN-13 (CD):

9783038599456

ISBN-13 (eBook):

9783035706291

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