[1]
W.J. Choyke, D.R. Hamilton, L. Patrick: Phys. Rev. 144 (1964), p. A1163.
Google Scholar
[2]
M.A. Green: J. Appl. Phys. 67 (1990), p.2944.
Google Scholar
[3]
Yu. Goldberg, M.E. Levinshtein, S.L. Rumyantsev in: Properties of Advanced SemiconductorMaterials Ga�, Al�, SiC, B�, SiC, SiGe . edited by. M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, John Wiley & Sons, Inc., New York (2001), pp.93-148.
DOI: 10.1142/9789812706850
Google Scholar
[4]
M. Bhatnagar, B. J. Baliga: IEEE Trans. Devices 40 (1993), p.645.
Google Scholar
[5]
A. Shöner, M. Krieger, G. Pensl, M. Abem: Chem. Vap. Dep. 12 (2006), p.523.
Google Scholar
[6]
H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, M. Abe: Microelectronic Engineering 83 (2006), p.185.
Google Scholar
[7]
H.P. Iwata, U. Lindelfelt, S. Öberg and P.R. Briddon: Phys. Rev. B 68 (2003), p.245309.
Google Scholar
[8]
U. Lindefelt, H. Iwata, S. Öberg, P.R. Briddon: Phys. Rev. B 67 (2003), p.155204.
Google Scholar
[9]
P. Käckell, Jürgen Furthmüller, and F. Bechstedt: Phys. Rev. B 58 (1998), p.1326.
Google Scholar
[10]
E.K. Polychroniadis, A. Mantzari, A. Freudenberg, J. Wollweber, R. Nitschke, T. Frank, G. Pensl, A. Schöner: Mater. Sci. Forum 483-485 (2005), p.319.
DOI: 10.4028/www.scientific.net/msf.483-485.319
Google Scholar
[11]
M. Marinova, F. Mercier, A. Mantzari, I. Galben, D. Chaussende, E.K. Polychroniadis: Physica B accepted.
Google Scholar
[12]
P. Pirouz, J. W. Yang: Ultramicroscopy 51, (1993) p.189.
Google Scholar
[13]
J. Eiksson, M. H. Weng, F. Roccaforte, F. Giannazzo, R. L. Nigro, J. Lorenzzi, S. Reshanov, G. Baratta, V. Raineri: Proceedings of the International Workshop on 3C-SiC hetero-epitaxy, Catania (Italy), May 6-8, (2009).
Google Scholar
[14]
A. Mantzari, C.B. Lioutas and E.K. Polychroniadis: Mater. Sci. Forum 600-603 (2009), p.67.
Google Scholar
[15]
H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta: Chem. Vap. Deposition 12 (2006), p.502.
Google Scholar
[16]
D. Chaussende, L. Latu-Romain, L. Auvray, M. Ucar, M. Pons, R. Madar : Mater Sci Forum 225 (2005), p.482.
DOI: 10.4028/www.scientific.net/msf.483-485.225
Google Scholar
[17]
M. Soueidan, G. Ferro, B. Nsouli, E.K. Polychroniadis, M. Kazan, S. Juilaguet, M. Roumié, D. Chaussande N. Habka, J. Stoemenos, J. Camassel, Y. Monteil : Cryst Growth Des 6 (2006) p.2598.
DOI: 10.1021/cg0603523
Google Scholar
[18]
M. Beshkova, M. Syväjärvi, R. Vasiliauskas, J. Birch, R. Yakimova: Mater Sci Forum 615 (2009), p.181.
DOI: 10.4028/www.scientific.net/msf.615-617.181
Google Scholar
[19]
M. Marinova, A. Mantzari, M. Beshkova, M. Syväjärvi, R. Yakimova, E.K. Polychroniadis, Mater Sci Forum in preparation.
Google Scholar
[20]
R. Vasiliauskas, M. Marinova, M. Syväjärvi, A. Mantzari, J. Lorenzzi, G. Ferro, E.K. Polychroniadis and R. Yakimova, Mater Sci Forum in preparation.
DOI: 10.4028/www.scientific.net/msf.645-648.175
Google Scholar
[21]
M. Marinova, A. Mantzari, M. Beshkova, M. Syväjärvi, R. Yakimova, E.K. Polychroniadis: Solid State Phenomena in preparation.
DOI: 10.4028/www.scientific.net/ssp.163.97
Google Scholar
[22]
F.R. Chien et al.: J. Mater. Res. 9 (1994), p.940.
Google Scholar
[23]
D. Chaussende, F. Baillet, L. Charpentier, E. Pernot, M. Pons, R. Madar: J. Elchtrochem. Soc. 150 (2003), G653.
DOI: 10.1149/1.1606689
Google Scholar
[24]
D. Chaussende, F. Mercier, A Boulle, F. Conchon, M. Soueidan, G. Ferro, A. Mantzari, A. Andreadou, E.K. Polychroniadis, C. Balloud, S. Juillaguet, J. Camassel, M. Pons: J. Crys. Growth 310 (2008), p.976.
DOI: 10.1016/j.jcrysgro.2007.11.140
Google Scholar
[25]
H. Nagasawa, K. Yagi, T. Kawahara and N. Hatta: Mater. Sci. Forum Vol. 433-436 (2003), p.3.
Google Scholar
[26]
M. Marinova G. Zoulis, T. Robert, F. Mercier, A. Mantzari, I. Galben, O. Kim-Hak, J. Lorenzzi, S. Juillaguet, D. Chaussende, G. Ferro, J. Camassel, E.K. Polychroniadis: Physics B accepted for publication; Mater Sci Forum in preparation.
DOI: 10.4028/www.scientific.net/msf.645-648.383
Google Scholar