Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Andrea Severino; Domenico Mello; Simona BONINELLI; Fabrizio Roccaforte; Filippo Giannazzo; Patrick Fiorenza; Cristiano Calabretta; Lucia Calcagno; Nicolò Piluso; Giuseppe Arena

doi:10.4028/www.scientific.net/MSF.963.407

Paper Titles

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation
p.390

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
p.403

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
p.407

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
p.412

Activation Energy for the Post Implantation Annealing of 10¹⁹ cm^-3 and 10²⁰cm^-3 Ion Implanted Al in 4H SiC
p.416

1300°C Annealing of 1×10²⁰ Al⁺ Ion Implanted 3C-SiC
p.420

Raman Spectroscopy Characterization of Ion Implanted 4H-SiC
p.424

HomeMaterials Science ForumMaterials Science Forum Vol. 963Effects of Thermal Annealing Processes in...

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Abstract:

Silicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, high electron mobility, and low anisotropy. Ion implantation is a key process for both n- and p-type selective doping of SiC devices. A subsequent annealing in the temperature range of 1600- 1800°C is required to remove the damage induced by the implantation process and to electrically activate the implanted dopants. The aim of this work is the investigation of the effect of thermal annealing on the damage induced by Phosphorous ion implantation to produce n-type regions.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

407-411

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.407

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Online since:

July 2019

Authors:

Andrea Severino*, Domenico Mello, Simona BONINELLI, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Cristiano Calabretta, Lucia Calcagno, Nicolò Piluso, Giuseppe Arena

Keywords:

4H-SiC, Dopant Activation Efficiency, Phosphorous Implantation, Structural Characterization

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References

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