Channeling in 4H-SiC from an Application Point of View

Peter Pichler; Tomasz Sledziewski; Volker Häublein; Anton J. Bauer; Tobias Erlbacher

doi:10.4028/www.scientific.net/MSF.963.386

Paper Titles

Characterization of β-Silicon Carbide and Potential Use as Irradiation Temperature Monitor
p.362

Terahertz Emission from SiC Natural Superlattices in Strong Electrical Field
p.367

Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
p.375

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures
p.382

Channeling in 4H-SiC from an Application Point of View
p.386

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation
p.390

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
p.403

HomeMaterials Science ForumMaterials Science Forum Vol. 963Channeling in 4H-SiC from an Application Point of...

Channeling in 4H-SiC from an Application Point of View

Abstract:

During ion implantation into monocrystalline semiconductors, some of the implanted atoms will be deflected to crystal directions along which they may penetrate deeply into the crystal. We investigate such channeling effects for Al and N implantation into 4H-SiC by Monte Carlo simulations. The focus of the work is on the effects of channeling on doping profiles, the relevance for the net doping of typical power electronic devices, and the influence of scattering oxides.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

386-389

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.386

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Online since:

July 2019

Authors:

Peter Pichler*, Tomasz Sledziewski, Volker Häublein, Anton J. Bauer, Tobias Erlbacher

Keywords:

Aluminum, Channeling, Ion Implantation, Nitrogen, Silicon Carbide

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