Diffusion of Alkali Metals in SiC
p.297
p.297
Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
p.301
p.301
On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates
p.305
p.305
Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy
p.309
p.309
Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
p.313
p.313
Polarized Photoluminescence from Partial Dislocations in 4H-SiC
p.319
p.319
Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
p.324
p.324
Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
p.328
p.328
Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
p.332
p.332
Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
Abstract:
This paper demonstrates high-resolution photoluminescence (PL) imaging and discrimination of threading dislocations in 4H-SiC epilayers. Threading screw dislocations (TSDs) and TEDs are distinguished by differences in PL spot size and spectrum. We found that TEDs are further discriminated into six types according to their Burgers vector directions by the appearance of PL imaging. Cross-sectional PL imaging reveals inclination angles of threading dislocations across a thick epilayer.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
313-318
Citation:
Online since:
February 2014
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