Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Christian Strenger; Viktoryia Uhnevionak; Alex Burenkov; Anton J. Bauer; Vincent Mortet; Elena Bedel-Pereira; Fuccio Cristiano; M. Krieger; Heiner Ryssel

doi:10.4028/www.scientific.net/MSF.740-742.537

Paper Titles

Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
p.521

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
p.525

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study
p.529

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
p.533

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
p.537

Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique
p.541

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
p.545

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
p.549

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
p.553

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Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Abstract:

To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface roughness scattering was con-sidered as a possible mobility degradation mechanism at high electric fields. First investigations of the SiC surface by atomic force microscopy (AFM) in the channel region after implantation, anneal-ing, and gate oxide removal revealed a rather rough topology. This could lead to fluctuations in the surface potential at the SiC/SiO2 interface, thus accounting in part for surface roughness scattering.