Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

Kazuki Yoshihara; Masashi Kato; Masaya Ichimura; Tomoaki Hatayama; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.740-742.373

Paper Titles

Raman Investigation of Aluminum-Doped 4H-SiC
p.357

An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals
p.361

An Extended EDMR Setup for SiC Defect Characterization
p.365

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation
p.369

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
p.373

Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC
p.377

Diffusion Study of Chlorine in SiC by First Principles Calculations
p.381

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
p.385

EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure
p.389

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Deep Levels in P-Type 4H-SiC Induced by Low-Energy...

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

Abstract:

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

373-376

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.373

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Online since:

January 2013

Authors:

Kazuki Yoshihara, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

Keywords:

4H-SiC, Carbon Vacancy, Deep Level, Electron Irradiation, I-DLTS, Recombination Centers

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