Demonstration of SiC Vertical Trench JFET Reliability
p.1017
p.1017
Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing
p.1021
p.1021
Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
p.1025
p.1025
Characterization of SiC JFET in Novel Packaging for 1 MHz Operation
p.1029
p.1029
Packaging Technologies for 500°C SiC Electronics and Sensors
p.1033
p.1033
High Voltage SiC Vertical JFET for High Power RF Applications
p.1037
p.1037
Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041
p.1041
A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045
p.1045
Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049
p.1049
Packaging Technologies for 500°C SiC Electronics and Sensors
Abstract:
This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500°C silicon carbide (SiC) electronics and sensors, and test results of packaged SiC JFETs and capacitive pressure sensors at 500°C.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
1033-1036
Citation:
Online since:
May 2012
Keywords:
Price:
Permissions: