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Reduction of Dislocations in the Bulk Growth of SiC Crystals
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The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
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Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
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Halide-CVD Growth of Bulk SiC Crystals
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Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Reduction of Dislocations in the Bulk Growth of...

Reduction of Dislocations in the Bulk Growth of SiC Crystals

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Abstract:

Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also dislocations should be reduced or eliminated perfectly. This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals. Moreover, large diameter crystals (>2”) with low dislocation density were successfully grown by the process.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

3-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.3

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Online since:

October 2006

Authors:

Daisuke Nakamura

Keywords:

Bulk Growth, Dislocation, Etching, Sublimation, Synchrotron X-Ray Topography

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[1] M. Bhatnagar and B. J. Baliga: IEEE Trans. Electron Devices 40 (1993), p.645

[2] C. I. Harris, S. Savage, A. Konstantinov, M. Bakowski and P. Ericsson: Appl. Surf. Sci. 184 (2001), p.393

[3] F. C. Frank: Acta Crystallographica 4 (1951), p.497

[4] J. Heindl, W. Dorsch, P. P. Strunk, S. G. Müller, R. Eckstein, D. Hofmann and A. Winnacker: Phys. Rev. Lett. 80 (1998), p.740

DOI: 10.1103/physrevlett.80.740

[5] M. Y. Gutkin, A. G. Sheinerman, T. S. Argunova, E. N. Mokhov, J. H. Je, Y. Hwu, W. L. Tsai and G. Margaritondo: Appl. Phys. 94 (2003), p.7076

DOI: 10.1063/1.1624481

[6] St.G. Müller et al.: Euro. Phys. J. Appl. Phys. 27 (2004), p.29

[7] T. Kato, K. Kojima, Si. Nishizawa, K. Arai: Mater. Sci. Forum 315-318 (2005), p.483

[8] Y. M. Tairov and V. F. Tsvetkov: J. Cryst. Growth 43 (1978), p.209

[9] A. Ellison, B. Magnusson, B. Sundqvist, G. Pozina, J. P. Bergman, E. Janzén and A. Vehanen: Mater. Sci. Forum 457-460 (2004), p.9

DOI: 10.4028/www.scientific.net/msf.457-460.9

[10] D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda and K. Takatori: Nature 430 (2004), p.1009

DOI: 10.1038/nature02810

[11] J. Takahashi, N. Ohtani, M. Katsuno and S. Shinoyama: J. Cryst. Growth 181 (1997), p.229

[12] H. Matsunami and T. Kimoto: Mater. Sci. & Eng. R 20 (1997), p.125

[13] S. Wang, A. Kopec, R. Ware, S. Poplawski, E. Sanchez, S. Holmes and A. Timmerman: Technical Digest of ICSCRM2001, p.85

[14] S. Yamaguchi, D. Nakamura, I. Gunjishima and Y. Hirose: these proceedings

[15] M. Selder, L. Kadinski, F. Durst, T. Straubinger, P. Wellmann and D. Hofmann: Mater. Sci. Forum 353-356 (2001), p.65

DOI: 10.4028/www.scientific.net/msf.353-356.65