Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
p.85
p.85
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
p.89
p.89
2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
p.93
p.93
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
p.97
p.97
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
p.101
p.101
Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
p.105
p.105
Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
p.109
p.109
CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
p.113
p.113
Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
p.117
p.117
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
Abstract:
The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with thermodynamical calculations. Photoluminescence spectra are also presented.
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Info:
Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
101-104
Citation:
Online since:
May 2005
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