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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Selective Growth of 4H-SiC on 4H-SiC Substrates...

Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.185

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Online since:

June 2004

Authors:

Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow

Keywords:

Chemical Vapor Deposition (CVD), Lateral Epitaxial Overgrowth, LEO, Selective Growth, Silicon Carbide (SiC)

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