Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
p.427
p.427
Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
p.431
p.431
Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
p.435
p.435
Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
p.439
p.439
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
p.443
p.443
Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
p.447
p.447
4H- to 3C-SiC Polytypic Transformation during Oxidation
p.451
p.451
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
p.455
p.455
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
p.459
p.459
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
443-446
Citation:
Online since:
April 2002
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